Semiconductor device having step-wise connection structures for thin film elements

ABSTRACT

A plurality of IC regions are formed on a semiconductor wafer, which is cut into individual chips incorporating ICs, wherein wiring layers and insulating layers are sequentially formed on a silicon substrate. In order to reduce height differences between ICs and scribing lines, a planar insulating layer is formed to cover the overall surface with respect to ICs, seal rings, and scribing lines. In order to avoid occurrence of breaks and failures in ICs, openings are formed to partially etch insulating layers in a step-like manner so that walls thereof are each slanted by prescribed angles ranging from 20° to 80°. For example, a first opening is formed with respect to a thin-film element section, and a second opening is formed with respect to an external-terminal connection pad.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is divisional of U.S. patent application Ser. No.11/088,969, filed Mar. 24, 2005, which is a continuation-in-part of U.S.patent application Ser. No. 11/039,956, filed Jan. 24, 2005, theentirety of which are incorporated herein by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to semiconductor wafers and to manufacturingmethods therefor, in which integrated circuits are formed onsemiconductor wafers, which are cut into individual chips along scribinglines. This invention also relates to semiconductor devices havingthin-film elements, which are formed on semiconductor wafers, and tomanufacturing methods therefor.

This application claims priority on Japanese Patent Applications Nos.2004-94621, 2004-94622 and 2005-75554, the contents of which areincorporated herein by reference.

2. Description of the Related Art

Conventionally, semiconductor devices such as IC chips and LSI chips aremanufactured using semiconductor wafers such as silicon wafers. Inaccordance with processes regarding thin film growth, photolithography,and etching, a plurality of integrated circuits (ICs) are formed on thesame semiconductor wafer, which is subjected to cutting along scribinglines by use of dicing saws and the like so as to separate individual ICchips (or semiconductor chips), wherein semiconductor chip are eachsubjected to wire-bonding with lead frames and are then subjected toresin molding.

Recently, a variety of electronic devices are manufactured and developedto realize highly-sophisticated functions, wherein they are reduced insizes and dimensions realizing small thickness, whereby it is possibleto produce composite semiconductor devices having multiple functionsrealizing functions of magnetic sensors, temperature sensors, andpressure sensors, which are put to practical uses. For example,composite semiconductor devices are accompanied with magnetic sensors,an example of which is disclosed in Japanese Patent ApplicationPublication No. H05-121793, wherein IC chips are equipped with giantmagnetoresistive effect elements (referred to as GMR elements).

FIG. 5 is a plan view showing a silicon wafer (or a semiconductor wafer)on which a plurality of semiconductor devices (i.e., semiconductor chipshaving magnetic sensors) are formed; FIG. 6 is an enlarged plan viewshowing a semiconductor device (i.e., a semiconductor chip having amagnetic sensor) and its periphery; and FIG. 7 is a cross-sectional viewtaken along line A-A in FIG. 6.

In FIG. 5, reference numeral 1 designates a silicon wafer in whichscribing lines 3 are formed in a latticed manner on a silicon substrate(or a semiconductor substrate) so as to form a plurality of IC regionsin a matrix manner, wherein the IC regions include IC components 4.

The IC components 4 each have a laminated structure in which wiringlayers including electric circuits and insulating layers are alternatelylaminated together. Specifically, as shown in FIG. 6, the IC component 4having a square shape includes an IC 5 implementing functions of variouscircuits such as an analog-to-digital converter (ADC), a memory (M), andan analog circuit (AnC), wherein GMR elements 6 to 9 are respectivelyarranged externally of and in proximity to prescribed sides (e.g., foursides in case of FIG. 6) of the IC 5 and are electrically connected withthe IC 5. That is, a magnetic sensor is realized by the GMR elements 6to 9.

Seal rings 11 are formed to encompass the IC component 4. Scribing lines3, which are band-like regions having prescribed widths, are formedoutside of the seal rings 11 in boundaries between adjacent IC regions.Channels 13 for separation of individual semiconductor chips are formedat the center of scribing lines 3.

FIG. 7 shows a cross-sectional structure with regard to the IC component4, seal ring 11, and scribing line 3, wherein an integrated circuit (IC)implementing functions of an analog-to-digital converter (ADC), a memory(M), and an analog circuit (AnC) and an insulating layer 22 composed ofsilicon oxide are formed on a p-type silicon substrate (referred to as ap-Si substrate) 21; an insulating layer 23 is formed to cover the ICregion and the insulating layer 22 such the one end thereof extends tothe seal ring 11; a wiring layer 24 a having a prescribed wiringpattern, an insulating layer 25 a, a wiring layer 24 b having aprescribed wiring pattern, and an insulating layer 25 b are sequentiallyformed and laminated together on the insulating layer 23. The threeinsulating layers 23, 25 a, and 25 b are arranged at verticallydifferent positions, wherein the insulating layers 25 a and 25 b areeach slanted and extend in the seal ring 11 in such a way that theinsulating layer 25 a covers the insulating layer 23, and the insulatinglayer 25 b covers the insulating layer 25 a.

The GMR elements 6 to 9 and a wiring layer 24 c are formed on a planarsurface of the insulating layer 25 b, and a metal layer 26, which isformed in the same level of the wiring layer 24 c, is formed in aslanted surface of the insulating layer 25 b, which extends in the sealring 11, in such a way that the lower end thereof is brought intocontact with the p-type silicon substrate 21. In addition, a passivationfilm (or a protective insulating layer) 28 composed of silicon nitrideis formed to cover the GMR elements 6-9, wiring layer 24 c, and metallayer 26. The wiring layers 24 a to 24 c are electrically connected witheach other by metals filled into via holes.

The passivation film 28 is subjected to patterning such that the lowerend thereof is limited within the range of the seal ring 11, so that theexposed region of the p-type silicon substrate 21, which is not coveredwith the passivation film 28, is used for the scribing line 3.

FIG. 8 is a cross-sectional view showing a second example of a siliconwafer, wherein an IC component 31 is constituted such that a planarinsulating layer 32 is formed to cover the GMR elements 6-9 and thewiring layer 24 c as well as the upper end of the metal layer 26, and apassivation film 33 is formed to cover the planar insulating layer 32and the metal layer 26.

FIG. 9 is a cross-sectional view showing a third example of a siliconwafer, wherein a seal ring 41 is subjected to patterning to realize alaminated structure comprising the insulating layer 23, a metal layer 42a that is formed in the same level of the wiring layer 24 a, theinsulating layer 25 a, a metal layer 42 b that is formed in the samelevel of the wiring layer 24 b, the insulating layer 25 b, and a metallayer 42 c that is formed in the same level of the wiring layer 24 c.The metal layers 42 a, 42 b, and 42 c are electrically connected witheach other by metals filled in via holes. In addition, a planarinsulating layer 32 is formed to cover the GMR elements 6-9 and thewiring layer 24 c as well as one end of the metal layer 42 c; apassivation film 33 is formed to cover the planar insulating layer 32and the upper portion of the metal layer 42 c as well as the endportions of the insulating layers 23, 25 a, and 25 b, whereby the lowerend of the passivation film 33 is limited within the range of the sealring 41.

As described above, the semiconductor chip having the magnetic sensor isconstituted in such a way that the magnetoresistive elements areincorporated into the IC; hence, it can cope with the recent tendenciesof electronic devices that are reduced in sizes and dimensions realizingsmall thickness.

Chip regions corresponding to semiconductor chips having thin-filmelements have multilayer structures in which wiring layers includingelectric circuits and insulating layers are laminated together withrespect to the IC components 4 and 31 respectively. Thin-film elementssuch as magnetic sensors are generally formed using thin films in orderto avoid deterioration of properties thereof, wherein passivation layersare formed on multilayer structures to realize planarity.

In the scribing line 3 partitioning chip regions, the surface of thep-type silicon substrate 21 is exposed so as to cause a relatively greatheight difference; hence, nonuniformity of resist application (i.e.,striation) may occur in resist formation regions, which are used to formthin-film elements on the IC components 4 and 31. This causes unwanteddeviations of shapes and dimensions of thin-film elements. In addition,there is a possibility that contaminating substances produced bythin-film elements may have adverse effects on the ‘exposed’silicon-related portions of IC regions.

As disclosed in the aforementioned publication, semiconductor devicessuch as IC devices and LSI devices have been developed in such a waythat thin-film elements such as magnetoresistive elements are formed onICs via insulating layers, wherein uppermost wiring layers are connectedwith thin-film elements via openings formed therein.

FIG. 17 is a cross-sectional view showing an example of a semiconductordevice accompanied with a thin-film element. That is, a semiconductordevice 101 of FIG. 17 is manufactured in such a way that an insulatinglayer 102 composed of silicon oxide or silicon nitride is formed on theupper portion of an IC formed on a silicon substrate (not shown); and awiring layer 103 having a prescribed pattern is formed on the insulatinglayer 102 and is electrically connected with the IC via a via hole (notshown) that is formed in the insulating layer 102.

An insulating layer 104 composed of silicon oxide is formed on thewiring layer 103; and an opening 105 is formed in the insulating layer104 so as to expose the surface of the wiring layer 103. In addition, athin-film element 107 is formed in association with the opening 105 ofthe insulating layer 104 via a wiring layer 106 therefor. Furthermore,an insulating film 108 composed of silicon nitride is formed toencompass peripheral ends of the thin-film element 107.

The insulating film 108 can be formed to entirely cover the upperportion of the thin-film element 107.

Next, a method for forming the opening 105 will be described. As shownin FIG. 18A, vacuum evaporation or sputtering is performed to form thewiring layer 103 having the prescribed pattern on the insulating layer102; then, the CVD (i.e., Chemical Vapor Deposition) process isperformed to form the insulating layer 104, which entirely covers theinsulating layer 102 and the wiring layer 103. The spin-coating processis performed to apply a photoresist 109 onto the insulating layer 104.The photoresist 109 is exposed to ultraviolet radiation via a mask (notshown) and is then subjected to development; thus, it is possible toform an opening 109 a whose pattern matches the pattern of the mask onthe photoresist 109.

Then, plasma etching or reactive ion etching is performed on theinsulating layer 104 by using the photoresist 109 as a mask so that theupper surface of the wiring layer 103 is exposed as shown in FIG. 18B,wherein an opening whose pattern matches the pattern of the opening 109a is formed in the insulating layer 104.

As shown in FIG. 18C, the photoresist 109 is removed, and vacuumevaporation or sputtering is performed to sequentially form films usinga wiring material 111 and a thin-film element material 112 inassociation with the wiring layer 103 and the insulating layer 104.

Thereafter, patterning is performed on the wiring material 111 and thethin-film element material 112, thus forming the wiring 106 and thethin-film element 107 shown in FIG. 17. An insulating film is furtherformed on the insulating layer 104 and the thin-film element 107 and isthen subjected to patterning so as to form an insulating film 108 inconnection with peripheral ends of the thin-film element 107.

In order to realize desired characteristics of thin-film elements, whichare formed on ICs in semiconductor devices, it is preferable to reducedimensions of thin-film elements and wiring layers therefor inthickness; and it is preferable for wiring layers of thin-film elementsto have planar surfaces. Such ‘thin’ wiring layers are formed to lieacross openings having cross-sectionally rectangular shapes on ICs. Thiscauses problems in that wiring layers become very thin in proximity toedges of openings and are therefore easy to break compared with normalwiring layers formed in semiconductor devices.

The aforementioned problems may be solved by reducing height differencesbefore the formation of thin-film elements, wherein insulating layersare covered with planar insulating layers. However, it may be difficultto eliminate height differences between ICs and thin-film elements inproximity to edges of openings. That is, in the semiconductor device101, the opening 105 has sharply rising walls in both sides thereof;hence, the wiring layer 106 may be easy to break in proximity to theopening 105. This reduces the reliability in manufacturing semiconductordevices.

The aforementioned drawback may be solved by forming the upper portionof the wall of the opening roughly in a semi-spherical shape or atapered shape. This may reduce the possibility regarding breaks of thewiring layer; however, due to the sharpness of the lower portion of thewall of the opening, there remain possibilities in that the wiring layermay be easy to break in proximity to the opening and may be reduced inthickness inside of the opening, which causes reduction of thereliability in manufacturing semiconductor devices.

SUMMARY OF THE INVENTION

It is an object of the invention to provide a semiconductor wafer and amanufacturing method therefor, which reduces nonuniformity of resistapplication in IC regions by reducing height differences between ICregions and scribing lines formed on semiconductor substrates, whereinit is possible to improve precision of dimensions in the formation ofthin-film elements in ICs, thus improving characteristics of thin-filmelements.

It is another object of the invention to provide a semiconductor deviceand a manufacturing method therefore, wherein it is possible to preventbreaks from occurring in a wiring layer establishing an electricalconnection between a thin-film element and an IC, whereby it is possibleto improve the reliability in manufacturing semiconductor devices.

In a first aspect of the invention, a plurality of IC regionspartitioned by scribing regions are formed on a semiconductor wafer soas to realize ICs having multilayer structures, and a plurality of sealrings are formed in peripheral areas of the ICs, wherein with respect toeach of the IC regions, an uppermost wiring layer is formed togetherwith a metal layer that is formed in the seal ring; a planar insulatinglayer is formed to cover the metal layer, IC, and scribing region; and apassivation film is formed on the planar insulating layer. Thisestablishes a certain degree of planarity with respect to all of the IC,seal ring, and scribing region; hence, it is possible to eliminate theheight difference between the IC and the scribing region. Thus, it ispossible to reduce the nonuniformity of resist application with respectto the IC; hence, it is possible to improve precision of dimensions andcharacteristics of thin-film elements formed on the IC.

In the above, etching is performed to selectively remove a prescribedregion of the planar insulating layer so as to expose a cavitysubstantially matching a hollow shape of the metal layer, and thepassivation film is formed to cover the metal layer and the planarinsulating layer. This causes the seal ring to partially break theplanar insulating layer, which may act as the water infiltration path,whereby it is possible to prevent water from infiltrating into the IC.

In addition, etching is performed to selectively remove a prescribedregion of the planar insulating layer so as to expose a planar portionof the metal layer, and the passivation film is formed to cover themetal layer and the planar insulating layer. Thus, it is possible tosignificantly reduce the height difference between the IC, seal ring,and scribing region.

Furthermore, etching is performed to substantially remove the planarinsulating layer so as to realize a planar surface constituted by themetal layer and a remaining portion of the planar insulating layer, andthe passivation film is formed on the planar surface. This establishesthe complete planarity on the IC, seal ring, and scribing region; hence,it is possible to eliminate the height difference between the IC andscribing region. Due to the substantially complete removal of the planarinsulating layer, it is possible to prevent water from infiltrating intothe IC.

At least one thin-film element such as a magnetoresistive element isformed directly on the planar insulating layer or on the passivationfilm. This improves the integration between the IC and the thin-filmelement.

It is possible to further form a second protective insulating layer tocover the thin-film element, which is thus protected from the externalenvironment. In addition, chemical mechanical polishing (CMP) can beperformed on the surface of the planar insulating layer, which is thusimproved in the degree of optical planarity on the order of nanometers.

In a second aspect of the invention, a semiconductor device is designedsuch that a thin-film element is formed on a wiring layer of an ICregion formed on a semiconductor substrate via an insulating layer,wherein it is characterized in that an opening is formed to expose apart of the wiring layer, and a secondary wiring layer is formed inconnection with the opening so as to establish an electric connectionbetween the wiring layer and the thin-film element, and wherein theopening is formed in a step-like manner so that the wall thereof isgradually expanded from the bottom to the upper end thereof. Thisprevents the secondary wiring layer from being easily broken; hence, itis possible to avoid the occurrence of the initial characteristicfailure such as the open failure, and it is possible to improve thereliability of the semiconductor device.

In the above, it is preferable that the insulating layer be realized bylaminating a plurality of insulating layers. Herein, the opening area ofthe upper insulating layer is expanded compared with the opening area ofthe lower insulating layer. This prevents the secondary wiring layerfrom being broken even when the secondary wiring layer is reduced inthickness.

In addition, it is possible to modify the semiconductor device such thatthe opening area of the upper insulating layer is reduced compared withthe opening area of the lower insulating layer, and the upper insulatinglayer is extended inwardly into the opening area of the lower insulatinglayer.

Furthermore, it is possible to modify the semiconductor device such thatthe insulating layer is realized by laminating three insulating layers,in which the opening area of the intermediate insulating layer isreduced compared with the opening area of the lower insulating layer,and the intermediate insulating layer is extended inwardly into theopening area of the lower insulating layer, and in which the openingarea of the lower insulating layer is expanded compared with the openingarea of the intermediate insulating layer.

In manufacture, a resist film having an opening whose wall is slantedand gradually expanded from the bottom to the upper end thereof isformed on the insulating layer, which is then subjected to selectiveremoval using the resist film as a mask, thus forming an opening in theinsulating layer, which is slanted and gradually expanded from thebottom to the upper end thereof. Herein, the wall of the opening of theresist film is slanted by a prescribed angle ranging from 20° to 80°about an axis lying in the thickness direction of the resist film. Inaddition, mixed gas including freon gas and oxygen gas is used for theselective removal of the insulating layer and for the etching formingthe opening having a desired shape.

In a third aspect of the invention, a semiconductor device is designedsuch that a thin-film element is formed on a wiring layer of an ICregion formed on a semiconductor substrate via an insulating layer inwhich a first opening and a second opening are respectively formed topartially expose the wiring layer at different positions, wherein asecondary wiring layer for establishing an electrical connection betweenthe wiring layer and the thin-film element is formed in connection withthe first opening so as to realize a thin-film element section, and thesecond wiring layer is partially exposed in the second opening so as torealize an external-terminal connection pad, which is separated from thethin-film element section. The first opening is gradually expanded in astep-like manner from the bottom to the upper end thereof, and thesecond opening is gradually expanded in a step-like manner from thebottom to the upper end thereof.

In the above, the insulating layer is realized by laminating a pluralityof insulating layers in a manner similar to that of the second aspect.

In manufacture, the first opening is formed by covering the wiring layerwith the insulating layer with respect to the external-terminalconnection pad; then, the second opening is formed by removing theinsulating layer covering the wiring layer with respect to theexternal-terminal connection pad. Herein, the insulating layer coveringthe wiring layer is removed using a resist film as a mask so as to formthe second opening with respect to the external-terminal connection pad.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other objects, aspects, and embodiments of the presentinvention will be described in more detail with reference to thefollowing drawings, in which:

FIG. 1 is a cross-sectional view showing essential parts of a siliconwafer in accordance with a first embodiment of the invention;

FIG. 2 is a cross-sectional view showing essential parts of a siliconwafer in accordance with a second modified example of the firstembodiment of the invention;

FIG. 3 is a cross-sectional view showing essential parts of a siliconwafer in accordance with a third modified example of the firstembodiment of the invention;

FIG. 4 is a cross-sectional view showing essential parts of a siliconwafer in accordance with a fourth modified example of the firstembodiment of the invention;

FIG. 5 is a plan view showing an example of a silicon wafer;

FIG. 6 is an enlarged plan view showing a semiconductor chip having amagnetic sensor and its periphery;

FIG. 7 is a cross-sectional view taken along line A-A in FIG. 6;

FIG. 8 is a cross-sectional view showing a second example of the siliconwafer;

FIG. 9 is a cross-sectional view showing a third example of the siliconwafer;

FIG. 10 is a cross-sectional view showing essential parts of asemiconductor device having thin-film elements in accordance with asecond embodiment of the invention;

FIG. 11A is a cross-sectional view showing a first step formanufacturing the semiconductor device shown in FIG. 10;

FIG. 11B is a cross-sectional view showing a second step formanufacturing the semiconductor device shown in FIG. 10;

FIG. 11C is a cross-sectional view showing a third step formanufacturing the semiconductor device shown in FIG. 10;

FIG. 11D is a cross-sectional view showing a fourth step formanufacturing the semiconductor device shown in FIG. 10;

FIG. 12 is a cross-sectional view showing essential parts of asemiconductor device in accordance with a first modified example of thesecond embodiment of the invention;

FIG. 13 is a cross-sectional view showing essential parts of asemiconductor device in accordance with a second modified example of thesecond embodiment of the invention;

FIG. 14 is a cross-sectional view showing essential parts of asemiconductor device in accordance with a third modified example of thesecond embodiment of the invention;

FIG. 15 is a cross-sectional view showing essential parts of asemiconductor device having thin-film elements in accordance with athird embodiment of the invention;

FIG. 16A is a cross-sectional view showing a first step formanufacturing the semiconductor device shown in FIG. 15;

FIG. 16B is a cross-sectional view showing a second step formanufacturing the semiconductor device shown in FIG. 15;

FIG. 16C is a cross-sectional view showing a third step formanufacturing the semiconductor device shown in FIG. 15;

FIG. 16D is a cross-sectional view showing a fourth step formanufacturing the semiconductor device shown in FIG. 15;

FIG. 16E is a cross-sectional view showing a fifth step formanufacturing the semiconductor device shown in FIG. 15;

FIG. 16F is a cross-sectional view showing a sixth step formanufacturing the semiconductor device shown in FIG. 15;

FIG. 16G is a cross-sectional view showing a seventh step formanufacturing the semiconductor device shown in FIG. 15;

FIG. 16H is a cross-sectional view showing an eighth step formanufacturing the semiconductor device shown in FIG. 15;

FIG. 16I is a cross-sectional view showing a ninth step formanufacturing the semiconductor device shown in FIG. 15;

FIG. 17 is a cross-sectional view showing an example of a semiconductordevice having a thin-film element;

FIG. 18A is a cross-sectional view showing a first step formanufacturing the semiconductor device shown in FIG. 17;

FIG. 18B is a cross-sectional view showing a second step formanufacturing the semiconductor device shown in FIG. 17; and

FIG. 18C is a cross-sectional view showing a third step formanufacturing the semiconductor device shown in FIG. 17.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

This invention will be described in further detail by way of exampleswith reference to the accompanying drawings.

1. First Embodiment

FIG. 1 is a cross-sectional view showing essential parts of a siliconwafer (or a semiconductor wafer) in which a plurality of semiconductordevices (i.e., semiconductor chips having magnetic sensors) are formedin accordance with a first embodiment of the invention, wherein partsidentical to those shown in FIG. 7 are designated by the same referencenumerals.

In FIG. 1, reference numeral 51 designates an IC that is formed in an ICregion of the p-type silicon substrate 21; reference numeral 52designates a seal ring that is formed in the periphery of the IC 51; andreference numeral 53 designates a scribing line (or a scribing region)that is formed outside of the seal ring 52 in the boundary betweenadjacent IC regions.

An insulating layer 23 composed of silicon dioxide (SiO₂) is formed tocover the IC 51 and the scribing line 53 on the p-type silicon substrate21; a wiring layer 24 a having a prescribed wiring pattern composed ofprescribed metals such as gold (Au) and aluminum (Al) is formed on theinsulating layer 23; a metal layer 54 a composed of the same materialsof the wiring layer 24 a is formed to cover the center portion of theseal ring 52; and an insulating layer 25 a composed of SiO₂ is formed tocover both ends of the metal layer 54 a in connection with theinsulating layer 23 and the wiring layer 24 a.

In addition, a wiring layer 24 b having a prescribed wiring patterncomposed of prescribed metals such as Au and Al is formed on theinsulating layer 25 a; a metal layer 54 b composed of the same materialsof the wiring layer 24 b is formed such that the lower portion thereofcomes in contact with the metal layer 54 a; an insulating layer 25 b isformed to cover the wiring layer 24 b and the insulating layer 25 a aswell as the both ends of the metal layer 54 b; GMR elements 6-9 and awiring layer 24 c are formed above the planar surface of the ‘uppermost’insulating layer 25 b; and a metal layer 54 c composed of the samematerial of the ‘uppermost’ wiring layer 24 c is formed to cover thecenter portion of the seal ring 52 such that the lower portion thereofcomes in contact with the metal layer 54 b.

Furthermore, a planar insulating layer 55 composed of SiO₂ is formed tocover the wiring layer 24 c and the metal layer 54 c; a passivation film(or a protective insulating layer) 56, which includes silicon nitride(i.e., Si₃N₄), is formed on the planar insulating layer 55; and the GMRelements 6-9 are formed on the passivation film 56.

As described above, the planar insulating layer 55 is arranged to coverall of the IC 51, seal ring 52, and scribing line 53 and is formed tohave a planar surface, by which it is possible to eliminate the heightdifference between the IC 51 and the scribing line 53. This eliminatesthe nonuniformity of resist application even when a resist is appliedonto the IC 51 in order to realize the further formation of thin-filmelements; and it is possible to improve the precision of dimensions inthe formation of thin-film elements further formed on the IC 51.

Next, a method of manufacturing a silicon wafer will be described indetail.

In accordance with the normal thin-film formation process, theinsulating layer 23, wiring layer 24 a, metal layer 54 a, insulatinglayer 25 a, wiring layer 24 b, metal layer 54 b, insulating layer 25 b,GMR elements 6-9, wiring layer 24 c, and metal layer 54 c aresequentially formed on the p-type silicon substrate 21.

In accordance with the SOG (i.e., Spin On Glass) method, a liquid mainlycomposed of perhydropolysilazane is applied onto the wiring layer 24 cand the metal layer 54 c; then, the semiconductor chip is left alone fora prescribed time so as to realize leveling, thus forming a planar film.The planar film applied to the semiconductor chip is subjected toburning at 450° C. or so in the atmospheric air so as to form the planarinsulating layer 55 composed of high-purity SiO₂. The surface of theplanar insulating layer 55 has a superior degree of planarity.

In accordance with the chemical vapor deposition (CVD) method, thepassivation film 56 composed of Si₃N₄ is formed to cover the planarinsulating layer 55.

In the plasma CVD method, for example, a prescribed material such asSiH₄—NH₃(N₂) or SiH₄—N₂O is used to realize film formation at a filmgrowth temperature of about 300° C.

Next, the GMR elements 6-9 are formed on the passivation film 56.

Thereafter, a second protective insulating layer (not shown) is formedto cover the GMR elements 6-9.

In the aforementioned manufacturing method, the planar insulating layer55 is formed to entirely cover the wiring layer 24 c and the metal layer54 c; thus, it is possible to eliminate the height difference betweenthe IC 51 and the scribing line 53. This facilitates the production of asilicon wafer having no height difference between the IC 51 and thescribing line 53.

In addition, the aforementioned liquid mainly composed ofperhydropolysilazane is applied onto the wiring layer 24 c and the metallayer 54 c; then, the semiconductor chip is subjected to burning at 450°C. or so in the atmospheric air, thus forming the planar insulatinglayer 55 composed of high-purity SiO₂. Thus, it is possible to producethe planar insulating layer 55 whose surface has a superior degree ofplanarity.

According to the silicon wafer of the present embodiment, the planarinsulating layer 55 having the planar surface is formed to entirelycover the IC 51, seal ring 52, and scribing line 53, whereby it ispossible to eliminate the height difference between the IC 51 and thescribing line 53. This reduces the nonuniformity of resist applicationeven when a resist is applied to the IC 51 in order to realize thefurther formation of thin-film elements; therefore, it is possible toimprove the precision of dimensions in the formation of thin-filmelements on the IC 51.

According to the manufacturing method of the silicon wafer of thepresent embodiment, the planar insulating layer 55 is formed to entirelycover the IC 51, seal ring 52, and scribing line 53; therefore, it ispossible to produce the silicon wafer having no height differencebetween the IC 51 and the scribing line 53.

In addition, the liquid mainly composed of perhydropolysilazane isapplied onto the IC 51, seal ring 52, and scribing line 53; then, thesemiconductor chip is subjected to burning at 450° C. or so in theatmospheric air so as to form the planar insulating layer 55 composed ofhigh-purity SiO₂, whereby it is possible to easily produce the planarinsulating layer 55 whose surface has a superior degree of planarity.

Next, modified examples of the present embodiment will be described indetail.

A first modified example will be described with regard to themanufacturing method of a silicon wafer with reference to FIG. 1.

In accordance with the normal thin-film formation process, theinsulating layer 23, wiring layer 24 a, metal layer 54 a, insulatinglayer 25 a, wiring layer 24 b, metal layer 54 b, insulating layer 25 b,wiring layer 24 c, and metal layer 54 c are sequentially formed on thep-type silicon substrate 21.

In accordance with the CVD method, a prescribed material of SiH₄—O₂ isprocessed to form the planar insulating layer 55 composed of SiO₂, whichcovers the wiring layer 24 c and the metal layer 54 c.

Irregularities are formed on the surface of the planar insulating layer55 in correspondence with projections and hollows formed on theinsulating layer 25 b, wiring layer 24 c, and metal layer 54 c. Chemicalmechanical polishing (CMP) is performed on the entire surface of theplanar insulating layer 55, which is thus made completely planar.

The CMP is performed in such a way that a silicon wafer (which is apolished subject) is arranged on a polishing head; slurry, in which fineparticles composed of SiO₂ and cerium oxide (CeO₂) are dispersed inalkaline solution such as potassium hydroxide (KOH) and/or aqueousammonia (NH₄OH), is subjected to dripping onto a polishing pad that isequipped with a fraise; the silicon wafer is rotated at a prescribedangular velocity under a prescribed pressure, so that it revolves on thefraise rotating at a different angular velocity.

Thus, it is possible to polish the surface of the planar insulatinglayer 55, which thus has a high degree of optical planarity on the orderof nanometers.

In accordance with the CVD method, the passivation film 56 includingSi₃N₄ is formed to cover the planar insulating layer 55. In the plasmaCVD process, for example, a prescribed material of SiH₄—NH₃(N₂) orSiH₄—N₂O is used for the film formation at a film growth temperature of300° C.

As described above, it is possible to produce the silicon wafer in whichno height difference is formed between the IC 51 and the scribing line53.

According to the aforementioned manufacturing method, the planarinsulating layer 55 is formed to cover the IC 51, seal ring 52, andscribing line 53; then, the surface of the planar insulating layer 55 issubjected to planarization; hence, it is possible to easily produce thesilicon wafer having no height difference between the IC 51 and thescribing line 53.

The CMP is performed to polish the entire surface of the planarinsulating layer 55, whereby it is possible to easily process the planarinsulating layer 55 to have a high degree of optical planarity on theorder of nanometers. This makes it easy to produce the silicon waferhaving no height difference between the IC 51 and the scribing line 53.

Instead of the CMP performed on the entire surface of the planarinsulating layer 55, it is possible to perform the CMP on the surface ofthe passivation film 56. In this case, it is possible to easily producethe silicon wafer having no height difference between the IC 51 and thescribing line 53.

Next, a second modified example will be described with reference to FIG.2, which is a cross-sectional view showing essential parts of a siliconwafer on which a plurality of semiconductor devices (i.e., semiconductorchips having magnetic sensors) are formed. Compared with the siliconwafer of FIG. 1 in which the planar insulating layer 55 is formed toentirely cover the metal layer 54 c, and the passivation film 56 isformed on the entire surface of the planar insulating layer 55, thesilicon wafer of FIG. 2 is characterized in that dry etching isperformed to selectively remove a prescribed region of the planarinsulating layer 55 above the metal layer 54 c so as to form a window57, by which a cavity is exposed in correspondence with the scribingregion of the metal layer 54 c, so that the passivation film 56 isformed to cover the ‘remaining’ planar insulating layer 55 and the‘exposed’ metal layer 54 c.

A manufacturing method of the silicon wafer of FIG. 2 will be describedin detail.

In accordance with the aforementioned steps used in the presentembodiment (see FIG. 1), the planar insulating layer 55 is formed toentirely cover the metal layer 54 c. Then, dry etching is performed toselectively remove a prescribed region of the planar insulating layer 55above the metal layer 54 c, thus exposing the cavity in correspondencewith the scribing region of the metal layer 54 c. Thereafter, the plasmaCVD method is performed to form the passivation film 56 to cover theplanar insulating layer 55 and the exposed metal layer 54 c. Thus, it ispossible to produce the silicon wafer of FIG. 2 having no heightdifference between the IC 51 and the scribing line 53.

According to the second modified example of the silicon wafer in whichthe planar insulating layer 55 entirely covers the IC 51 and thescribing line 53, it is possible to eliminate the height differencebetween the IC 51 and the scribing line 53.

In addition, the second modified example is characterized in that dryetching is performed to selectively remove a prescribed region of theplanar insulating layer 55 above the metal layer 54 c, and thepassivation film 56 is formed to directly cover the exposed metal layer54 c. This causes the seal ring 52 to partially break the planarinsulating layer 55, which may act as the water infiltration path;hence, it is possible to prevent water from infiltrating into the IC 51.

Furthermore, according to the manufacturing method of the silicon waferof the second modified example, the planar insulating layer 55 issubjected to etching so as to expose the cavity in correspondence withthe scribing region of the metal layer 54 c, wherein the passivationfilm 56 is formed to cover the exposed metal layer 54 c. Thus, it ispossible to easily produce the silicon wafer having no height differencebetween the IC 51 and the scribing line 53, which also eliminates thepossibility that water will infiltrate into the IC 51.

Next, a third modified example will be described with reference to FIG.3, which is a cross-sectional view showing essential parts of a siliconwafer on which a plurality of semiconductor devices (i.e., semiconductorchips having magnetic sensors) are formed. Compared with the siliconwafer of FIG. 1 in which the planar insulating layer 55 is formed toentirely cover the metal layer 54 c, and the passivation film 56 isformed on the entire surface of the planar insulating layer 55, thesilicon wafer of FIG. 3 is characterized in that dry etching isperformed to selectively remove a prescribed region of the planarinsulating layer 55 above the relatively planar portion of the metallayer 54 c so as to form a window 58, by which the relatively planarportion of the metal layer 54 c is exposed; then, the passivation film56 is formed to cover the planar insulating layer 55 and the exposedportion of the metal layer 54 c.

In the above, the relatively planar portion of the metal layer 54 ccorresponds to the boundary between the scribing region and the ICregion with respect to the metal layer 54 c, wherein the metal layer 54is partially made planar.

In the silicon wafer of FIG. 3, the planar insulating layer 55 entirelycovers the IC 51; it covers most of the seal ring 52; and it entirelycovers the scribing line 53; hence, it is possible to extremely reducethe height difference between the IC 51 and the seal ring 52.

In addition, etching is performed to selectively remove the prescribedregion of the planar insulating layer 55 above the relatively planarportion of the metal layer 54 c, and the passivation film 56 is formedto directly cover the exposed portion of the metal layer 54 c. Thiscauses the seal ring 52 to partially break the planar insulating layer55, which may act as the water infiltration path; hence, it is possibleto prevent water from infiltrating into the IC 51.

Next, a fourth modified example will be described with reference to FIG.4, which is a cross-sectional view showing essential parts of a siliconwafer on which a plurality of semiconductor devices (i.e., semiconductorchips having magnetic sensors) are formed. Compared with the siliconwafer of FIG. 1 in which the planar insulating layer 55 entirely coversthe metal layer 54 c, and the passivation film 56 is formed on theentire surface of the planar insulating layer 55, the silicon wafer ofFIG. 4 is characterized in that dry etching is performed on the planarinsulating layer 55 in its certain depth so as to expose the surface ofthe metal layer 54 c, which is made identical in level to the surface ofthe planar insulating layer 55, and the passivation film 56 is formed onthe entirely planar surface so as to cover the remaining portion of theplanar insulating layer 55 and the metal layer 54 c.

In the silicon wafer of FIG. 4, the planar insulating layer 55 entirelycovers the IC 51, seal ring 52, and scribing line 53; hence, it ispossible to eliminate the height difference between the IC 51 and theseal ring 52.

This causes the seal ring 52 to partially break the planar insulatinglayer 55, which may act as the water infiltration path, by the metallayer 54 c; hence, it is possible to prevent water from infiltratinginto the IC 51.

2. Second Embodiment

FIG. 10 is a cross-sectional view showing essential parts of asemiconductor device having thin-film elements in accordance with asecond embodiment of the invention, wherein reference numeral 121designates a p-type silicon substrate (or a semiconductor substrate);reference numerals 122 designate transistors formed on the siliconsubstrate; and reference numerals 123 designate field insulating filmscomposed of silicon oxide, which are formed between the transistors 122.Herein, an IC region 124 includes the transistors 122, field insulatingfilms 123, and peripheral circuits and other elements (not shown), whichare formed on the silicon substrate 121.

The transistors 122 are each constituted by sources 130 a and drains 130b, which are formed on the silicon substrate 121, and gates 131 d thatare formed above the lightly-doped source regions 131 a andlightly-doped drain regions 131 b on SiO₂ films (or gate insulatingfilms) 131 c.

On the IC region 124, there are sequentially formed an insulating layer132 composed of silicon oxide, a first wiring layer 133 having aprescribed pattern composed of Al, Ti, TiN, W, and Cu, an insulatinglayer 134 composed of silicon oxide that covers the insulating layer 132and the first wiring layer 133, and a second wiring layer 135 having aprescribed pattern composed of Al, Ti, TiN, W, and Cu, as well asinsulating layers 136, 137, and 138 composed of silicon oxide, siliconnitride, or lamination of silicon oxide and silicon nitride, which arelaminated together so as to cover the insulating layer 134 and thesecond wiring layer 135. In addition, contacts 141, composed of Al, Ti,TiN, W, and Cu, for establishing electric connections between the n+source and drain layers 130 a and 130 b and the first wiring layer 133are embedded in the insulating layer 132. Furthermore, vias 142,composed of Al, Ti, TiN, W, and Cu, for establishing electricconnections between the first wiring layer 133 and the second wiringlayer 135 are embedded in the insulating layer 134.

Openings 136 a, 137 a, and 138 a are respectively formed in theinsulating layers 136, 137, and 138 so as to partially expose the uppersurface of the second wiring layer 135. The wall of the opening 136 a isslanted in such a way that the opened area of the opening 136 a isgradually expanded from the bottom to the upper end, wherein the slantedwall of the opening 136 a has a slanted angle θ that ranges from 20° to80° against the bottom of the insulating layer 136.

The opened area of the opening 137 a is expanded to form a step-likeportion above the opening 136 a, wherein the wall of the opening 137 ais slanted in such a way that the opened area is gradually expanded fromthe bottom to the upper end, and wherein the slanted angle of theslanted wall of the opening 137 a ranges from 20° to 80° against thebottom of the insulating layer 137.

Similarly, the opened area of the opening 138 a is expanded to form astep-like portion above the openings 136 a and 137 a, wherein the wallof the opening 138 a is slanted in such a way that the opened area isgradually expanded from the bottom to the upper end, and wherein theslanted angle of the slanted wall of the opening 138 a ranges from 20°to 80° against the bottom of the insulating layer 138.

A wiring layer 139 for establishing electric connection between athin-film element (not shown), which is formed on the insulating layer138, and the second wiring layer 135 is formed on the walls of theopening 136 a to 138 a and the upper surface of the second wiring layer135.

In the semiconductor device having the thin-film element describedabove, the walls of the openings 136 a to 138 a, which expose the uppersurface of the second wiring layer 135, are formed in a step-like mannerand are each slanted against the bottoms of the insulating layers 136 to138 by prescribed slanted angles ranging from 20° to 80°. This increasesthe thickness of the wiring layer 139 that is formed on the walls of theopenings 136 a to 138 a; hence, it is possible to reliably prevent thewiring layer 139 for the thin-film element from being broken. Inaddition, it is possible to avoid the occurrence of initialcharacteristic failure such as open failure due to failure of the wiringlayer 139; hence, it is possible to improve the reliability ofsemiconductor devices having thin-film elements.

Next, a method for forming the openings 136 a to 138 a will be describedin detail.

As shown in FIG. 11A, the insulating layer 136 is formed to entirelycover the insulating layer 134 and the second wiring layer 135; a resistfilm 151 is formed on the insulating layer 136; then, the resist film151 is subjected to patterning using a mask, thus forming an opening 151a at a prescribed position of the resist film 151.

The resist film 151 is exposed to light whose wavelength ranges from 100nm to 500 nm, preferably, from 140 nm to 450 nm, for a prescribed timeperiod ranging from 100 msec to 2000 msec; then, the semiconductordevice is subjected to heating using a heating device (e.g., a hot plateor an oven) at a prescribed temperature ranging from 120° C. to 200° C.for a prescribed time ranging from 1 min to 60 min.

Thus, it is possible to produce the resist film 151 as shown in FIG.11B, in which thickness t ranges from 500 nm to 3000 nm; width Wa of theopening 151 a ranges from 1 nm to 100 nm, preferably from 10 nm to 50nm, and optimally 20 nm; slanted angle θ of the wall of the opening 151a ranges from 20° to 80° against the bottom of the resist film 151.

As shown in FIG. 11C, etching is performed on the insulating layer 136using the resist film 151 as a mask, wherein the insulating layer 136 isexposed to etching gas (or selective removal gas) g including freon gasand oxygen gas.

Specifically, the etching gas g is realized as mixed gas having aprescribed composition including CF₄ ranging from 20 sccm to 80 sccm,CHF₃ ranging from 60 sccm to 200 sccm, and O₂ ranging from 80 sccm to120 sccm.

Preferably, the mixed gas has a composition including CF₄ of 60 sccm,CHF₃ of 180 sccm, and O₂ of 100 sccm or a composition including CF₄ of30 sccm, CHF₃ of 180 sccm, and O₂ of 100 sccm.

In the above, the wall of the opening 151 a of the resist film 151 isslanted so that when the etching gas g is sprayed from the upperposition of the resist film 151 to the insulating layer 136, it causeserosion of the resist in the periphery of the opening 151 a, which isthus gradually expanded in width from Wa to Wb. That is, the opening 151a of the resist film 151 is expanded by etching, whereby the opened areaof the opening 136 a is gradually expanded as the opening 151 a of theresist film 151, which is reduced in dimensions. As a result, the wallof the opening 136 a is slanted by the slanted angle θ ranging from 20°to 80° against the bottom of the insulating layer 136.

Thereafter, the resist film 151 is completely removed. Thus, as shown inFIG. 11D, it is possible to form the insulating layer 136 having theopening 136 a whose wall is slanted by the slanted angle θ ranging from20° to 80° against the bottom of the insulating layer 136.

By repeating the aforementioned steps, it is possible to sequentiallyform the insulating layer 137 having the opening 137 a and theinsulating layer 138 having the opening 138 a above the insulating layer136 having the opening 136 a by use of different masks (realized byresist films) matching dimensions of the openings 137 a and 138 arespectively.

As described above, the semiconductor device having thin-film elementsaccording to the present embodiment is characterized in that the wallsof the openings 136 a to 138 a, by which the upper surface of the secondwiring layer 135 is exposed, are formed in a step-like manner and areeach slanted by the slanted angle ranging from 20° to 80° against thebottoms of the insulating layers 136 to 138 respectively. This increasesthe thickness of the wiring layer 139 formed on the walls of theopenings 136 a to 138 a; hence, it is possible to prevent the wiringlayer 139 from being broken, and it is possible to avoid the occurrenceof the initial characteristic failure such as the open failure due tothe failure of the wiring layer 139. Therefore, it is possible toimprove the reliability of wiring regarding thin-film elements insemiconductor devices, which are thus improved in reliability.

According to the manufacturing method as shown in FIGS. 11A to 11D,etching is performed on the insulating layer 136 by use of a maskcorresponding to the resist film 151 having the opening 151 a whose wallis slanted by the slanted angle θ ranging from 20° to 80° against thebottom of the insulating layer 136; hence, it is possible to easilyprocess the insulating layer 136 to have the opening 136 a whose wall isslanted by the slanted angle θ ranging from 20° to 80° against thebottom of the insulating layer 136.

Thus, it is possible to prevent the wiring layer 139 for the thin-filmelement from being broken; and it is possible to easily producesemiconductor devices having thin-film elements that is improved inreliability in terms of wiring.

Next, a modified example of the second embodiment will be described indetail.

FIG. 12 is a cross-sectional view showing essential parts of asemiconductor device in accordance with a first modified example of thesecond embodiment of the invention. Compared with the semiconductordevice of the second embodiment shown in FIG. 10 in which the openings136 a to 138 a are gradually expanded outwardly in a step-like manner insuch a way that the opening 137 a of the intermediate insulating layer137 is opened outside of the opening 136 a of the lowermost insulatinglayer 136, and the opening 138 a of the uppermost insulating layer 138is opened outside of the opening 137 a of the intermediate insulatinglayer 137, the semiconductor device of FIG. 12 is characterized in thatthe openings 136 a to 138 a are inwardly reduced in a step-like mannerin which the opening 137 a of the intermediate insulating layer 137 isopened inside of the opening 136 a of the lowermost insulating layer136, and the opening 138 a of the uppermost insulating layer 138 isopened inside of the opening 137 a of the intermediate insulating layer137.

The aforementioned openings 136 a to 138 a shown in FIG. 12 can beformed in accordance with steps similar to the foregoing steps forforming the openings 136 a to 138 a shown in FIG. 10. Herein, it isnecessary to use masks having patterns realizing the openings 136 a, 137a, and 138 a shown in FIG. 12.

According to the first modified example shown in FIG. 12, similarly tothe second embodiment shown in FIG. 10, it is possible to increase thethickness of the wiring layer 139 formed on the walls of the openings136 a to 138 a; therefore, it is possible to prevent the wiring layer139 for the thin-film element from being broken; hence, it is possibleto avoid the occurrence of the initial characteristic failure such asthe open failure due to the failure of the wiring layer 139. As aresult, it is possible to improve the reliability in wiring; and it ispossible to improve the reliability in manufacturing semiconductordevices having thin-film elements.

FIG. 13 is a cross-sectional view showing essential elements of asemiconductor element having a thin-film element in accordance with asecond modified example of the second embodiment of the invention.Compared with the semiconductor device of FIG. 10 in which the openings136 a to 138 a are expanded outwardly in a step-like manner in which theopening 137 a of the intermediate insulating layer 137 is openedrelative to the opening 136 a of the lowermost insulating layer 136, andthe opening 138 a of the uppermost insulating layer 138 is openedrelative to the opening 137 a of the intermediate insulating layer 137,the semiconductor device of FIG. 13 is characterized in that the opening137 a of the intermediate insulating layer 137 is opened inwardly of theopening 136 a of the lowermost insulating layer 136, and the opening 138a of the uppermost insulating layer 138 is opened outwardly of theopening 137 a of the intermediate insulating layer 137 and is inwardlyof the opening 136 a of the lowermost insulating layer 136.

The aforementioned openings 136 a to 138 a shown in FIG. 13 can beformed in steps similar to the foregoing steps for forming the openings136 a to 138 a shown in FIG. 10. Herein, it is necessary to use maskshaving patterns realizing the openings 136 a, 137 a, and 138 a shown inFIG. 13.

According to the second modified example shown in FIG. 13, similarly tothe second embodiment shown in FIG. 10, it is possible to increase thethickness of the wiring layer 139 formed on the walls of the openings136 a to 138 a; therefore, it is possible to prevent the wiring layer139 for the thin-film element from being broken; hence, it is possibleto avoid the occurrence of the initial characteristic failure such asthe open failure due to the failure of the wiring layer 139. As aresult, it is possible to improve the reliability in wiring; and it ispossible to improve the reliability in manufacturing semiconductordevices having thin-film elements.

FIG. 14 is a cross-sectional view showing essential parts of asemiconductor device in accordance with a third modified example of thesecond embodiment of the invention. Compared with the semiconductordevice of FIG. 10 in which the openings 136 a to 138 a are expandedoutwardly in a step-like manner in which the opening 137 a of theintermediate insulating layer 137 is opened relative to the opening 136a of the lowermost insulating layer 136, and the opening 138 a of theuppermost insulating layer 138 is opened relative to the opening 137 aof the intermediate insulating layer 137, the semiconductor device ofFIG. 14 is characterized in that the opening 137 a of the intermediateinsulating layer 137 is opened inwardly of the opening 136 a of thelowermost insulating layer 136, and the opening 138 a of the uppermostinsulating layer 138 is opened inwardly of the opening 137 a of theintermediate insulating layer 137 and the opening 136 a of the lowermostinsulating layer 136 respectively.

The aforementioned openings 136 a to 138 a shown in FIG. 14 can beformed in steps similar to the foregoing steps for forming the openings136 a to 138 a shown in FIG. 10. Herein, it is necessary to use maskshaving patterns realizing the openings 136 a, 137 a, and 138 a shown inFIG. 14.

According to the third modified example shown in FIG. 14, similarly tothe second embodiment shown in FIG. 10, it is possible to increase thethickness of the wiring layer 139 formed on the walls of the openings136 a to 138 a; therefore, it is possible to prevent the wiring layer139 for the thin-film element from being broken; hence, it is possibleto avoid the occurrence of the initial characteristic failure such asthe open failure due to the failure of the wiring layer 139. As aresult, it is possible to improve the reliability in wiring; and it ispossible to improve the reliability in manufacturing semiconductordevices having thin-film elements.

3. Third Embodiment

FIG. 15 is a cross sectional view showing essential parts of asemiconductor device having thin films in accordance with a thirdembodiment of the invention, wherein parts identical to those shown inFIG. 10 are designated by the same reference numerals; hence, thedetailed description thereof is omitted. Compared with the semiconductordevice of the second embodiment shown in FIG. 10 in which the wiringlayer 139 for establishing electric connection between the second wiringlayer 135 and a thin-film element (not shown) is formed in the openings136 a to 138 a, the semiconductor device of the third embodiment shownin FIG. 15 is characterized in that it includes a thin-film elementsection 160, in which the wiring layer 139 for establishing electricconnection between the second wiring layer and a thin-film element (notshown) is formed in the openings 136 a to 138 a, and anexternal-terminal connection pad 170 in which an external-terminalelectrode 180 is formed in openings 136 a to 138 a.

Specifically, the semiconductor device of FIG. 15 has plural sets of theopenings 136 a to 138 a, among which the thin-film element section 160is formed with respect to the prescribed sets of the openings 136 a to138 a, and the external-terminal connection pad 170 is formed withrespect to the other sets of the openings 136 a to 138 a. In addition,the semiconductor device also includes test pads and dummy pads (bothnot shown) with respect to the remaining sets of the openings 136 a to138 a.

In the external-terminal connection pad 170, the openings 136 a to 138 aare gradually expanded outwardly in a step-like manner such that theopening 137 a of the intermediate insulating layer 137 is openedrelative to the opening 136 a of the lowermost insulating layer 136, andthe opening 138 a of the uppermost insulating layer 138 is openedrelative to the opening 137 a of the intermediate insulating layer 137.Of course, it is possible to modify the relationship between theopenings 136 a to 138 a as shown in FIGS. 12 to 14.

According to the third embodiment shown in FIG. 15, similarly to thesecond embodiment shown in FIG. 10, it is possible to increase thethickness of the wiring layer 139 formed on the walls of the openings136 a to 138 a; therefore, it is possible to prevent the wiring layer139 for the thin-film element from being broken; hence, it is possibleto avoid the occurrence of the initial characteristic failure such asthe open failure due to the failure of the wiring layer 139. As aresult, it is possible to improve the reliability in wiring; and it ispossible to improve the reliability in manufacturing semiconductordevices having thin-film elements.

Next, a manufacturing method for the semiconductor device of the thirdembodiment will be described with reference to FIGS. 16A to 16I.

In the manufacturing method, an overall insulating layer is constitutedby the insulating layers 136 to 138, wherein when the openings 136 a to138 a are formed by partially exposing the second wiring layer 135 withrespect to the thin-film element section 160, the second wiring layer135 for the external-terminal connection pad 170 is covered with theinsulating layer; then, the insulating layer covering the second wiringlayer 135 for the external-terminal connection pad 170 is partiallyremoved so as to form the openings 136 a to 138 a with respect to theexternal-terminal connection pad 170. In FIGS. 16A to 16I, the overallopening width for the external-terminal connection pad 170 ranges from80 μm to 100 μm, and the overall opening width for the thin-film elementsection 160 is set to approximately 10 μm, for example.

FIG. 16A shows a first step in which an insulating layer 136 is formedto entirely cover an insulating layer 134 and a second wiring layer 135with respect to both of the thin-film element section 160 and theexternal-terminal connection pad 170; then, a resist film 151 is formedon the insulating layer 136. Thereafter, patterning is performed usingthe resist film 151 as a mask, so that openings are formed at prescribedpositions of the resist film 151 with respect to the thin-film elementsection 160 and the external-terminal connection pad 170, which are thensubjected to exposure and heat treatment, whereby the side walls of theopenings are each slanted against the bottom of the resist film 151 by aprescribed slanted angle θ, which ranges from 20° to 80°.

FIG. 16B shows a second step in which in accordance with the maskcorresponding to the resist film 151, the insulating layer 136 isselectively removed using etching gas with respect to the thin-filmelement section 160 and the external-terminal connection pad 170, sothat the second wiring layer 135 is partially opened. Then, the resistfilm 151 is removed. Thus, it is possible to form openings 136 a whoseside walls are each slanted against the bottom of the insulating layer136 by the prescribed slanted angle θ ranging from 20° to 80°.

FIG. 16C shows a third step in which an insulating layer 137 is formedon the second wiring layer 135 and the insulating layer 136 so as tocover the openings 136 a with respect to the thin-film element section160 and the external-terminal connection pad 170.

FIG. 16D shows a fourth step in which a resist film 152 is formed on theinsulating layer 137; then, patterning is performed using the resistfilm 152 as a mask so that an opening is formed at a prescribed positionof the resist film 152 only with respect to the thin-film elementsection 160, which is then subjected to light exposure and heattreatment.

FIG. 16E shows a fifth step in which in accordance with the maskcorresponding to the resist film 152, the insulating layer 137 isselectively removed using etching gas with respect to the thin-filmelement section 160, so that the second wiring layer 135 is partiallyopened. Then, the resist film 152 is removed. Thus, it is possible toform an opening 137 a whose side walls are each slanted against thebottom of the insulating layer 137 by the prescribed slanted angle θranging from 20° to 80°. In this step, the insulating layer 137regarding the external-terminal connection pad 170 is not selectivelyremoved.

FIG. 16F shows a sixth step in which an insulating layer 138 is formedto cover the insulating layer 137 with respect to the external-terminalconnection pad 170 and to cover the insulating layer 137, the opening137 a, and the second wiring layer 135 with respect to the thin-filmelement section 160. Then, a resist film 153 is formed on the insulatinglayer 138. Thereafter, patterning is performed using the resist film 153as a mask so as to form openings at prescribed positions of the resistfilm 153 with respect to the thin-film element section 160 and theexternal-terminal connection pad 170, which are then subjected to lightexposure and heat treatment.

FIG. 16G shows a seventh step in which in accordance with the maskcorresponding to the resist film 153, the insulating layer 138 isselectively removed using etching gas with respect to the thin-filmelement section 160 and the external-terminal connection pad 170. Then,the resist film 153 is removed. In this step, the second wiring layer135 is partially opened with respect to the thin-film element section160, while the second wiring layer 135 covered with the insulating layer137 is not opened with respect to the external-terminal connection pad170.

Thereafter, the semiconductor device is transported to a thin-filmelement formation machine in order to form a thin-film element (notshown) and a thin-film element wiring layer 139 therefor in the openings136 a to 138 a with respect to the thin-film element section 160. Atthis time, the second wiring layer 135 is covered with the insulatinglayer 137 with respect to the external-terminal connection pad 170,whereby it is possible to avoid the occurrence of erosion and oxidationdue to oxygen and water in the air with respect to the second wiringlayer 135. When the thin film element and thin-film element wiring layer139 are formed in the openings 136 a to 138 a with respect to thethin-film element section 160 by means of the thin-film elementformation machine, it is possible to prevent the second wiring layer 135of the external-terminal connection pad 170 covered with the insulatinglayer 137 from being damaged due to plasma and the like.

FIG. 16H shows an eighth step in which after the formation of thethin-film element wiring layer 139, the semiconductor device is coveredwith a passivation film (or protective layer) 140; then, a resist film154 is formed to cover the passivation film 140 with respect to both ofthe thin-film element section 160 and the external-terminal connectionpad 170. Then, patterning is performed using the resist film 154 as amask, so that an opening is formed at a prescribed position of theresist film 154 with respect to the external-terminal connection pad170, which is then subjected to light exposure and heat treatment.

FIG. 16I shows a ninth step in which in accordance with the maskcorresponding to the resist film 154, the passivation film 40 and theinsulating layer 137 are selectively removed using etching gas withrespect to the external-terminal connection pad 170. In this step, thesecond wiring layer 135 is partially opened with respect to theexternal-terminal connection pad 170, while the second wiring layer 135of the thin-film element section 160 covered with the resist film 154 isnot damaged by the etching gas. Thereafter, the resist film 154 isremoved. Thus, it is possible to completely produce the semiconductordevice as shown in FIG. 16I.

In the semiconductor device of the present embodiment shown in FIG. 16I,the openings 136 a to 138 a for the thin-film element section 160 areformed in such a way that the opening 137 a of the intermediateinsulating layer 137 is opened relative to the opening 136 a of thelowermost insulating layer 136, and the opening 138 a of the uppermostinsulating layer 138 is opened relative to the opening 137 a of theintermediate insulating layer 137, whereas the openings 136 a to 138 afor the external-terminal connection pad 170 are formed in such a waythat the opening 137 a of the intermediate insulating layer 137 isopened relative to the opening 136 a of the lowermost insulating layer136, and the opening 138 a of the uppermost insulating layer 138 isopened outside of the opening 137 a of the intermediate insulating layer137 and is opened relative to the opening 136 a of the lowermostinsulating layer 136. According to the manufacturing method of thesemiconductor device of the present embodiment, it is possible torealize different shapes and different dimensions with respect to theopenings 136 a to 138 a for the thin-film element section 160 and theopenings 136 a to 138 a for the external-terminal connection pad 170respectively.

In the manufacturing method of the present embodiment, the insulatinglayers for the external-terminal connection pad 170 are removed in twosteps using two masks, wherein the resist film 153 is used for theremoval of the insulating layer 138, and the resist film 154 is used forthe removal of the passivation film 140 and the insulating layer 137. Itis possible to modify the manufacturing method of the present embodimentin such a way that only a single resist film 154 is used to collectivelyremove all of the passivation film 140 and the insulating layers 137 and138, whereby the openings 136 a to 138 a are formed with respect to theexternal-terminal connection pad 170.

The aforementioned modification can be realized by partially modifyingthe sixth step and eighth step. For example, in FIG. 16F, the resistfilm 153 on the insulating layer 138 is opened with respect to thethin-film element section 160 but is not opened with respect to theexternal-terminal connection pad 170, wherein etching is controlled soas not to selectively remove the insulating layer 138 for theexternal-terminal connection pad 170 by etching gas. In FIG. 16H, theresist film 154 for the external-terminal connection pad 170 is openedand is used as a mask for collectively removing the passivation film 140and insulating layers 137 and 138 by etching gas with respect to theexternal-terminal connection pad 170. That is, a plurality of insulatinglayers are collectively and simultaneously removed by using a singleresist film as a mask, whereby it is possible to reduce troublesomeoperation in manufacturing.

Incidentally, it is possible to use a giant magnetoresistive element(GMR element) as a thin-film element formed in the thin-film elementsection 160. In this case, the external-terminal connection pad 170 canbe used as a bias magnet layer corresponding to the lamination of magnetfilms, for example.

According to the present embodiment, a plurality of openings are formedin insulating layers so as to partially expose wiring layers such thatside walls thereof are slanted in a step-like manner and are graduallyexpanded in the direction from the bottom to the upper end, whereby itis possible to prevent thin-film element wiring layers for establishingelectric connections between wiring layers and thin-film elements frombeing broken, and it is possible to prevent external-terminal connectionelectrodes from being broken; hence, it is possible to avoid theoccurrence of the initial characteristic failure such as the openfailure. Thus, the present embodiment demonstrates outstanding effectswhen applied to composite chips, in which plural types of devices andfunctions are integrated on a single substrate, and large-scalecomposite chips in which plural types of devices and functions arehighly integrated.

As this invention may be embodied in several forms without departingfrom the spirit or essential characteristics thereof, the aforementionedembodiments are therefore illustrative and not restrictive, since thescope of the invention is defined by the appended claims rather than bythe description preceding them, and all changes that fall within metesand bounds of the claims, or equivalents of such metes and bounds aretherefore intended to be embraced by the claims.

1. A semiconductor device comprising: an IC region formed on asemiconductor substrate; a first wiring layer formed above the ICregion; a first insulating layer, wherein an opening is formed in thefirst insulating layer to expose a part of the first wiring layer, andwherein the opening is formed in a step-like manner so that a wallthereof is gradually expanded from a bottom to an upper end thereof; athin film element formed on the first insulating layer; a secondarywiring layer formed in the opening so as to establish an electricconnection between the first wiring layer and the thin-film element; anda second insulating layer covering the secondary wiring layer.
 2. Thesemiconductor device according to claim 1, wherein the first insulatinglayer is realized by laminating a plurality of insulating layers.
 3. Thesemiconductor device according to claim 1, wherein the first insulatinglayer is constituted by at least two insulating layers including anupper insulating layer and a lower insulating layer, in which an openingarea of the upper insulating layer is expanded compared with an openingarea of the lower insulating layer.
 4. The semiconductor deviceaccording to claim 1, wherein the first insulating layer is constitutedby at least two insulating layers including an upper insulating layerand a lower insulating layer, in which an opening area of the upperinsulating layer is reduced compared with an opening area of the lowerinsulating layer, and the upper insulating layer is extended inwardlyinto the opening area of the lower insulating layer.
 5. Thesemiconductor device according to claim 1, wherein the first insulatinglayer is constituted by three insulating layers including an upperinsulating layer, an intermediate insulating layer, and a lowerinsulating layer, in which an opening area of the intermediateinsulating layer is reduced compared with an opening area of the lowerinsulating layer and is extended inwardly into the opening area of thelower insulating layer, and an opening area of the upper insulatinglayer is expanded compared with the opening area of the intermediateinsulating layer.
 6. The semiconductor device according to claim 1,wherein the thin-film element is covered with a silicon nitride film. 7.A semiconductor device comprising: an IC region formed on asemiconductor substrate; a first wiring layer formed above the ICregion; an insulating layer in which a first opening and a secondopening are respectively formed to partially expose the first wiringlayer at different positions, wherein the first opening is graduallyexpanded in a step-like manner from a bottom to an upper end thereof,and the second opening is gradually expanded in a step-like manner froma bottom to an upper end thereof; a thin film element formed on theinsulating layer; and a secondary wiring layer establishing an electricconnection between the first wiring layer and the thin-film element, thesecondary wiring layer is formed in the first opening so as to realize athin-film element section, wherein the first wiring layer is partiallyexposed in the second opening so as to realize an external-terminalconnection pad, which is separated from the thin-film element section.8. The semiconductor device according to claim 7, wherein the insulatinglayer is realized by laminating a plurality of insulating layers.
 9. Thesemiconductor device according to claim 7, wherein the insulating layeris constituted by at least two insulating layers including an upperinsulating layer and a lower insulating layer, in which an opening areaof the upper insulating layer is expanded compared with an opening areaof the lower insulating layer.
 10. The semiconductor device according toclaim 7, wherein the insulating layer is constituted by at least twoinsulating layers including an upper insulating layer and a lowerinsulating layer, in which an opening area of the upper insulating layeris reduced compared with an opening area of the lower insulating layer,and the upper insulating layer is extended inwardly into the openingarea of the lower insulating layer.
 11. The semiconductor deviceaccording to claim 7, wherein the insulating layer is constituted bythree insulating layers including an upper insulating layer, anintermediate insulating layer, and a lower insulating layer, in which anopening area of the intermediate insulating layer is reduced comparedwith an opening area of the lower insulating layer and is extendedinwardly into the opening area of the lower insulating layer, and anopening area of the upper insulating layer is expanded compared with theopening area of the intermediate insulating layer.
 12. The semiconductordevice according to claim 7, wherein the thin-film element is coveredwith a silicon nitride film.